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Proceedings Paper

Characterization of 1550 nm Fabry-Perot laser structures for application as mode-locked pulse sources
Author(s): Wei Li; Risto Ronkko; M. Peltola; A. Rydefalk; Markus Pessa; H. Scholl; S. Garidel; Kevin A. Williams; P. Moreno; H. Lamela; M. Cavallari
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Paper Abstract

We have investigated the characteristics of 1550 nm GaInAsP/InP multiple quantum well (MQW) structures to be used as the gain medium in monolithic mode-locked lasers. For this purpose, a series of laser structures with 3 QWs, 5 QWs and 8 QWs were grown and processed into ridge waveguide lasers. The impact of the quantum well number was studied by analyzing the changes in threshold current, external quantum efficiencies, gain-spectra and linewidth enhancement factors, which are valuable in design and modeling of the mode-locked lasers. Monolithic 20 GHz mode-locked lasers were fabricated. Pulse trains with a good extinction ratio of 14.8 dB and less than 14 ps in width were demonstrated, and an average power of 1 mW could be coupled into an optical fiber.

Paper Details

Date Published: 1 September 2004
PDF: 8 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.543908
Show Author Affiliations
Wei Li, Tampere Univ. of Technology (Finland)
Risto Ronkko, Tampere Univ. of Technology (Finland)
M. Peltola, Tampere Univ. of Technology (Finland)
A. Rydefalk, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
H. Scholl, Opto Speed Deutschland GmbH (Germany)
S. Garidel, Institut d'Electronique et de Nanotechnologie, CNRS (France)
Kevin A. Williams, Univ. of Cambridge (United Kingdom)
P. Moreno, Univ. Carlos III de Madrid (Spain)
H. Lamela, Univ. Carlos III de Madrid (Spain)
M. Cavallari, Nortel Networks (United Kingdom)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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