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Proceedings Paper

In1-xGaxAsyP1-y nipi structure and its application to semiconductor optical amplifiers
Author(s): G. Ru; J. Yan; Z. B. Chen; Fow-Sen Choa; Terrance Worchesky
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Paper Abstract

In1-xGaxAsyP1-y nipi Structure has been grown by MOCVD and been characterized by photoluminescence. The two PL profiles from the direct and the indirect recombination channels were clearly observed. The excitation intensity and temperature dependence of the PL profiles are studied. A calculated carrier lifetime, as long as 71μs is possible to be realized. With such a long carrier lifetime, we can push the XT noise out of the signal band down to frequencies < f=f=1/(2πτ)=2.2kHz. Equivalently, the XT is eliminated.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543845
Show Author Affiliations
G. Ru, Univ. of Maryland/Baltimore County (United States)
J. Yan, Univ. of Maryland/Baltimore County (United States)
Z. B. Chen, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)
Terrance Worchesky, Univ. of Maryland/Baltimore County (United States)

Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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