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Proceedings Paper

Study of wavelength shift in quantum well structure by MOCVD selective area growth
Author(s): G. Ru; X. Yu; Yu Sun; Z. B. Chen; Fow-Sen Choa
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Paper Abstract

Bulk InGaAs and InGaAsP and quantum well structure were grown on different oxide pattern. The material composition varies with the width of oxide pattern. The PL peak wavelength of the grown SAG quantum well is determined by the variation of both the material composition and the well width. We have experimentally identified the ratio of the contribution from the two sources, which agree well with the theoretical calculation from the measured thickness changes.

Paper Details

Date Published: 15 December 2003
PDF: 3 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543716
Show Author Affiliations
G. Ru, Univ. of Maryland/Baltimore County (United States)
X. Yu, Univ. of Maryland/Baltimore County (United States)
Yu Sun, Univ. of Maryland/Baltimore County (United States)
Z. B. Chen, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)


Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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