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Proceedings Paper

Study of P-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As, and In0.52Al0.48As
Author(s): J. Yan; G. Ru; Y. Gong; Fow-Sen Choa
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Paper Abstract

The incorporation of carbon into In0.53Ga0.47As, In0.52Al0.48As and In0.52Al0.2Ga0.28As lattice matched to InP was investigated using carbon tetrabromide (CBr4) as the carbon source in Metalorganic Chemical Vapor Depositions growth. The parameters and growth conditions are optimized to get high p-type doping for photonic device applications. This is among the first few studies on C-doping in InAlAs and InAlGaAs, and the results show that the presence of Al also efficiently helps to obtain high p-type carbon doping.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543715
Show Author Affiliations
J. Yan, Univ. of Maryland/Baltimore County (United States)
G. Ru, Univ. of Maryland/Baltimore County (United States)
Y. Gong, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)

Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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