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Proceedings Paper

Study of N-type Si delta doping on InP and In0.53Ga0.47As
Author(s): J. Yan; G. Ru; Fow-Sen Choa
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Paper Abstract

The method of using Si delta doping to obtain high n-type doping for InP and In0.53Ga0.47As lattice matched to InP was studied. With the multiple delta doping, we can obtain ~1019 cm-3 N-type doping for both the InP and InGaAs materials by using TMI, PH3, Si2H6 and TEGa precursors in Metalorganic Chemical Vapor Depositions growths. Current results show that the delta doping technique is critical for getting extremely high N-type doping in InP and InGaAs.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543713
Show Author Affiliations
J. Yan, Univ. of Maryland/Baltimore County (United States)
G. Ru, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)

Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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