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Proceedings Paper

Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics
Author(s): Michel Meunier; Mathieu Ducharme; Jean-Yves Degorce; Yougui Liao; Alain Lacourse
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Paper Abstract

Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. Using transmission electron microscopy, we showed that the laser induced diffusible resistance can be performed without any structural modification to the microdevices. Current-voltage (I-V) characteristics of these new microdevices are shown to be linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model involving an approximate calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model.

Paper Details

Date Published: 14 November 2003
PDF: 6 pages
Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.543669
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal (Canada)
LTRIM Technologies (Canada)
Mathieu Ducharme, Ecole Polytechnique de Montreal (Canada)
Jean-Yves Degorce, Ecole Polytechnique de Montreal (Canada)
Yougui Liao, Ecole Polytechnique de Montreal (Canada)
Alain Lacourse, LTRIM Technologies (Canada)

Published in SPIE Proceedings Vol. 5147:
ALT'02 International Conference on Advanced Laser Technologies
Heinz P. Weber; Vitali I. Konov; Thomas Graf, Editor(s)

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