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Proceedings Paper

Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses
Author(s): Graeme Rice; D. Jones; K. S. Kim; John M. Girkin; D. Jarozynski; Martin D. Dawson
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Paper Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size ~10s of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are compared and contrasted.

Paper Details

Date Published: 14 November 2003
PDF: 9 pages
Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.543662
Show Author Affiliations
Graeme Rice, Univ. of Strathclyde (United Kingdom)
D. Jones, Univ. of Strathclyde (United Kingdom)
K. S. Kim, Univ. of Strathclyde (United Kingdom)
John M. Girkin, Univ. of Strathclyde (United Kingdom)
D. Jarozynski, Univ. of Strathclyde (United Kingdom)
Martin D. Dawson, Univ. of Strathclyde (United Kingdom)


Published in SPIE Proceedings Vol. 5147:
ALT'02 International Conference on Advanced Laser Technologies
Heinz P. Weber; Vitali I. Konov; Thomas Graf, Editor(s)

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