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Proceedings Paper

Nondestructive in-line monitoring method for diffusion process control in InP
Author(s): Yahong Y.H. Qian; Chris Pawlowicz; Vlad Temchenko; Christina Elliott; Andrew Woodard; Tedeusz Bryskiewicz; Kim Kirkwood; Kevin Hewitt
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Paper Abstract

We report a non-destructive in-line monitoring method developed for Cd diffusion into InP on SACM-APD structure. Photocurrent vs voltage measurement are taken directly via proving diffused diodes on a wafer. We demonstrate that there is linear correlation between punch-through voltages Vpt on the photo I-V curves and diffusion depth measured by SIMS and Polaron profiles. It has been established that Vpt can be extracted easily from I-V curves and used for re-diffusion to approach target depth.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.543541
Show Author Affiliations
Yahong Y.H. Qian, Bookham Technology (Canada)
Chris Pawlowicz, Bookham Technology (Canada)
Vlad Temchenko, Bookham Technology (Canada)
Christina Elliott, Bookham Technology (Canada)
Andrew Woodard, Bookham Technology (Canada)
Tedeusz Bryskiewicz, Bookham Technology (Canada)
Kim Kirkwood, Bookham Technology (Canada)
Kevin Hewitt, Bookham Technology (Canada)


Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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