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Proceedings Paper

3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes
Author(s): Joachim Piprek; Thomas M. Katona; Steven P. DenBaars; Simon Li
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Paper Abstract

Compact ultraviolet light sources are currently of high interest for applications in solid-state lighting, short-range communication, and bio-chemical detection. Our nitride-based light-emitting diode (LED) includes AlGaN quantum wells with an emission wavelength of approximately 340 nm. In this paper, we analyze internal device physics by three-dimensional (3D) numerical simulation. The simulation incorporated a 3D drift-diffusion model for the carrier transport, the quantum well (QW) energy band-structure including interface polarization charges, the local QW spontaneous emission spectrum, as well as 3D raytracing for photon extraction. The simulation results showed good agreement with measurements. Internal physical mechanisms such as current crowding, carrier leakage, and carrier recombination were investigated. Nanoscale effects exhibited a strong influence on the LED performance.

Paper Details

Date Published: 21 June 2004
PDF: 10 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.543266
Show Author Affiliations
Joachim Piprek, Univ. of California/Santa Barbara (United States)
Thomas M. Katona, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)
Simon Li, Crosslight Software Inc. (United States)

Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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