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Proceedings Paper

Gain improvement for the THz p-Ge laser using neutron transmutation doped active crystal
Author(s): Elena S. Flitsiyan; Maxim V. Dolguikh; Andrei V. Muravjov; Eric W. Nelson; Todd W. Du Bosq; Robert E. Peale; Christopher J. Fredricksen; William G. Vernetson
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Paper Abstract

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The negative factor of stronger ionized impurity scattering due to high compensation in NTD Ge is shown to be unremarkable for the gain at moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

Paper Details

Date Published: 8 September 2004
PDF: 12 pages
Proc. SPIE 5411, Terahertz for Military and Security Applications II, (8 September 2004); doi: 10.1117/12.542695
Show Author Affiliations
Elena S. Flitsiyan, Univ. of Central Florida (United States)
Maxim V. Dolguikh, Univ. of Central Florida (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Eric W. Nelson, Univ. of Central Florida (United States)
Todd W. Du Bosq, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Christopher J. Fredricksen, Zaubertek, Inc. (United States)
William G. Vernetson, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 5411:
Terahertz for Military and Security Applications II
R. Jennifer Hwu; Dwight L. Woolard, Editor(s)

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