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Proceedings Paper

InP-based multiwavelength QWIP technology
Author(s): Ayub M Fathimulla; Harry Hier; Leye Aina; Terrance Worchesky; Parvez Uppal
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Paper Abstract

This paper describes the design, growth and fabrication characterization of novel multi-wavelength QWIP wafers based on InP material systems. We designed, grew, fabricated and characterized AlGaInAs/GaInAs QWIPs suitable for operation at 3-5 μm, and 8-12 μm spectral range. We fabricated mid-wave IR 320 x 250 focal plane arrays, hybridized them with Si -readout circuits and performed radiometric and imaging tests. Excellent imaging results of the mid-wave IR focal plane arrays with an operability of 88% and mean NEDT of 0.09K have been achieved. To our knowledge, this is the first imaging with InP based QWIPs focal plane array.

Paper Details

Date Published: 30 August 2004
PDF: 11 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.542366
Show Author Affiliations
Ayub M Fathimulla, Epitaxial Technologies, LLC (United States)
Harry Hier, Epitaxial Technologies, LLC (United States)
Leye Aina, Epitaxial Technologies, LLC (United States)
Terrance Worchesky, Univ. of Maryland/Baltimore County (United States)
Parvez Uppal, BAE SYSTEMS (United States)


Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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