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Proceedings Paper

Novel surface treatment of HgCdTe using hydrazine
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Paper Abstract

Surface treatment is one of the key issues for fabricating long-wavelength infrared (LWIR) detectors having good performance. In this paper, a novel surface treatment using hydrazine has been proposed for HgCdTe and its validity has been confirmed with ellipsometry and C-V analysis. The fixed charge density and trap oxide charge density of hydrazine-treated sample have shown so small value of 1.29×109 cm-2 and 4.35×1010 cm-2, respectively, comparing with those obtained with the conventional Br-MeOH-treated sample. In addition, the hydrazine-treated sample has shown high frequency characteristic in the C-V curve, which means the large effective minority carrier lifetime on the surface. By applying the new surface treatment using hydrazine to vacancy-doped wafers, LWIR photodiodes have been successfully fabricated. Current-voltage (I-V) characteristics of the hydrazine-treated Hg0.77Cd0.23Te diodes were also measured. Average R0A products of these diodes with the junction area of 30x30 μm2 were about 2.54 Ωcm2, which satisfy 95% BLIP (background limited infrared photodetector) condition for LWIR photodiodes.

Paper Details

Date Published: 30 August 2004
PDF: 8 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.542042
Show Author Affiliations
Min Yung Lee, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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