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Proceedings Paper

Laser plasma EUVL sources: progress and challenges
Author(s): Martin C. Richardson; Chiew-Seng Koay; Kazutoshi Takenoshita; C. Keyser; S. George; Somsak Teerawattansook; Moza M. Al-Rabban; H. Scott
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Paper Abstract

The most pressing technical issue for the success of EUV lithography is the provision of a high repetition-rate source having sufficient brightness, lifetime, and with sufficiently low off-band heating and particulate emissions characteristics to be technically and economically viable. We review current laser plasma approaches and achievements, with the objective of projecting future progress and identifying possible limitations and issues requiring further investigation.

Paper Details

Date Published: 20 May 2004
PDF: 7 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.541586
Show Author Affiliations
Martin C. Richardson, CREOL/FPCE/Univ. of Central Florida (United States)
Chiew-Seng Koay, CREOL/FPCE/Univ. of Central Florida (United States)
Kazutoshi Takenoshita, CREOL/FPCE/Univ. of Central Florida (United States)
C. Keyser, CREOL/FPCE/Univ. of Central Florida (United States)
S. George, CREOL/FPCE/Univ. of Central Florida (United States)
Somsak Teerawattansook, CREOL/FPCE/Univ. of Central Florida (United States)
Moza M. Al-Rabban, Qatar Univ. (Qatar)
H. Scott, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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