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Proceedings Paper

Nano-particle laser removal from silicon wafers
Author(s): J. M. Lee; S. H. Cho; T. H. Kim; Jin-Goo Park; Ahmed A. Busnaina
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Paper Abstract

A laser shock cleaning (LSC) technique as a new dry cleaning methodology has been applied to remove micro and nano-scale inorganic particulate contaminants. Shock wave is generated in the air just above the wafer surface by focusing intensive laser beam. The velocity of shock wave can be controlled to 10,000 m/sec. The sub-micron sized silica and alumina particles are attempted to remove from bare silicon wafer surfaces. More than 95% of removal efficiency of the both particles are carried out by the laser-induced airborne shock waves. In the final, a removal of nano-scale slurry particles from real patterned wafers are successfully demonstrated by LSC after chemical-mechanical polishing (CMP) process.

Paper Details

Date Published: 18 November 2003
PDF: 4 pages
Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); doi: 10.1117/12.541167
Show Author Affiliations
J. M. Lee, Innovative Laser Technology (United States)
S. H. Cho, Innovative Laser Technology (United States)
T. H. Kim, Innovative Laser Technology (United States)
Jin-Goo Park, Hanyang Univ. (South Korea)
Ahmed A. Busnaina, Northeastern Univ. (United States)


Published in SPIE Proceedings Vol. 5063:
Fourth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Andreas Ostendorf; Koji Sugioka; Henry Helvajian, Editor(s)

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