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Proceedings Paper

Modeling for profile-based process-window metrology
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Paper Abstract

We formulate a physical model to extract effective dose and defocus (EDD) from pattern profile data and demonstrate its efficacy in the analysis of in-line scatterometer measurements. From the measurement of a single target structure, the model enables simultaneous computation of pattern dimensions pre-calibrated to the imaging system dose and focus settings. Our approach is generally applicable to ensuring the adherence of pattern features to dimensional tolerances in the control and disposition of product wafers while minimizing in-line metrology.

Paper Details

Date Published: 29 April 2004
PDF: 10 pages
Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); doi: 10.1117/12.540914
Show Author Affiliations
Christopher P. Ausschnitt, IBM Corp. (United States)
Shaunee Y. Cheng, IMEC (Belgium)


Published in SPIE Proceedings Vol. 5378:
Data Analysis and Modeling for Process Control
Kenneth W. Tobin Jr., Editor(s)

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