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Proceedings Paper

Fabrication process of molecular memory circuits by nanoimprint lithography
Author(s): Gun-Young Jung; S. Ganapathiappan; Xuema Li; Dougleas A. A. Ohlberg; Deidre L. Olynick; Yong Chen; Wei Wu; Shih-Yuan Wang; William M. Tong; R. Stanley Williams
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Paper Abstract

We have utilized the nanoimprint lithography process described this paper to fabricate a rewritable, nonvolatile memory cell with an equivalent density of 6.4 Gbits/cm2. The architecture of the circuit was based on an 8x8 crossbar structure with an active molecular layer sandwiched between the top and bottom electrodes. A liftoff process was utilized to produce the top and bottom electrodes, made of Pt/Ti bilayers. The active molecular layer was deposited by the Languir-Blodgett technique. We proposed the use of a new class of nanoimprint resist formulated by dissolving a polymer in its monomer, such as poly(benzyl methacrylate) dissolved in benzyl methacrylate (~8%/92% wt). The new resist enabled us to achieve Pt /Ti lines of 40 nm in width and 130 nm in pitch, as described in this paper. Our overall nanofabrication process has the advantages of relatively low temperature (~70°C) and pressure (~500 psi or 4.5 MPa), both of which are critical to preserving the integrity of the molecular layer.

Paper Details

Date Published: 20 May 2004
PDF: 6 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.540898
Show Author Affiliations
Gun-Young Jung, Hewlett-Parkard Labs. (United States)
S. Ganapathiappan, Hewlett-Parkard Labs. (United States)
Xuema Li, Hewlett-Parkard Labs. (United States)
Dougleas A. A. Ohlberg, Hewlett-Parkard Labs. (United States)
Deidre L. Olynick, Lawrence Berkeley National Lab. (United States)
Yong Chen, Hewlett-Packard Labs. (United States)
Hewlett-Packard Co. (United States)
Wei Wu, Hewlett-Packard Labs. (United States)
Shih-Yuan Wang, Hewlett-Packard Labs. (United States)
William M. Tong, Hewlett-Packard Labs. (United States)
Hewlett-Packard Co. (United States)
R. Stanley Williams, Hewlett-Packard Labs. (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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