Share Email Print
cover

Proceedings Paper

Ablation process induced by femtosecond laser in transparent dielectrics
Author(s): Xiaoxi Li; Tianqin Jia; Donghai Feng; Zhizhan Xu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The ablation process in sapphire and fused silica are studied with laser at 800 nm and 400 nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the Fth with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.

Paper Details

Date Published: 18 November 2003
PDF: 5 pages
Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); doi: 10.1117/12.540643
Show Author Affiliations
Xiaoxi Li, Shanghai Institute of Optics and Fine Mechanics (China)
Tianqin Jia, Shanghai Institute of Optics and Fine Mechanics (China)
Donghai Feng, Shanghai Institute of Optics and Fine Mechanics (China)
Zhizhan Xu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 5063:
Fourth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Andreas Ostendorf; Koji Sugioka; Henry Helvajian, Editor(s)

© SPIE. Terms of Use
Back to Top