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Proceedings Paper

Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes
Author(s): Jinhyun Lee; Petr G. Eliseev; Marek Osinski; Dong-Seung Lee; Jeffrey C. Ramer; Doru I. Florescu; Eric A. Armour
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Paper Abstract

Properties of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) grown by MOCVD on sapphire substrates are investigated over a temperature range from 290 to 340 K. Two types of wafers are used to fabricate the devices: one with Mg dopants in p-type epilayers pre-activated in N2 ambient for 4 min at 800 °C, and the other as-grown, without any pre-activation of Mg acceptors. Measured specific resistances of p-side contacts are 1.49x10-4 Ωcm2 for contacts on pre-activated samples annealed at 650°C for 4 min, and 1.55x10-5 Ωcm2 for contacts on as-grown samples annealed at 600 °C for 30 min. Based on the specific contact resistance experiments, interdigitated LEDs are fabricated using either the standard annealing procedures (separate annealings for p-type conduction activation and for ohmic contact formation) or a single-step annealing process (simultaneous annealing for activation of p-type conduction and for ohmic contact formation). In devices fabricated using the standard annealing procedures, the electroluminescence (EL) peak position at 300 K is at 2.379 eV (~521.3 nm) and the full width at half maximum (FWHM) is ~132 meV, while in devices fabricated using a single-step annealing, the EL peak position shows a red shift by ~10 meV without affecting the FWHM. Over the entire voltage range up to 4 V, tunneling is the dominant carrier transport mechanism. The operating voltage is comparable in both types of LEDs, and the output power of LEDs fabricated using the single-step annealing process is somewhat improved.

Paper Details

Date Published: 18 June 2004
PDF: 8 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540327
Show Author Affiliations
Jinhyun Lee, CHTM/Univ. of New Mexico (United States)
Petr G. Eliseev, CHTM/Univ. of New Mexico (United States)
P.N. Lebedev Physical Institute (Russia)
Marek Osinski, CHTM/Univ. of New Mexico (United States)
Dong-Seung Lee, Veeco TurboDisc Operations (United States)
Jeffrey C. Ramer, Veeco TurboDisc Operations (United States)
Doru I. Florescu, Veeco TurboDisc Operations (United States)
Eric A. Armour, Veeco TurboDisc Operations (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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