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Proceedings Paper

High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates
Author(s): Virginia M. Robbins; Steven D. Lester; David P. Bour; Jeffrey N. Miller; Francoise Mertz
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Paper Abstract

We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in the p-type material. The active layers are transferred onto Si wafers using wafer-scale Pd silicide bonding. We have obtained single-mode room-temperature output powers as high as 2.4mW at 1330nm and 2.7mW at 1550nm. At 80C we have obtained 0.6mW of single-mode power at 1330nm and over 1 mW at 1550nm. These are the highest power single-mode InP-based VCSELs reported in these wavelength ranges.

Paper Details

Date Published: 18 June 2004
PDF: 9 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540323
Show Author Affiliations
Virginia M. Robbins, Agilent Technologies (United States)
Steven D. Lester, Agilent Technologies (United States)
David P. Bour, Agilent Technologies (United States)
Jeffrey N. Miller, Agilent Technologies (United States)
Francoise Mertz, Agilent Technologies (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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