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Proceedings Paper

Low-threshold, high-T0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD
Author(s): Ashish Tandon; David P. Bour; Ying Lan Chang; Chao Kun Lin; Scott W. Corzine; Michael R. Tan
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Paper Abstract

We report results for broad area edge emitting lasers having AlInGaAs active regions that exhibit low thresholds, high T0 and T1 and high efficiencies. The lasers were grown on InP substrates using MOCVD. This paper analyzes the effects of doping, epilayer design, wavelength dependence and number of QWs on device performance. Our results show that the concentration and offset of zinc doping in the p-cladding layer plays a major role in carrier confinement and hence high temperature performance. The difference in surface mobility of Al adatoms (as compared to In or Ga) poses some challenges in the growth of AlInGaAs.

Paper Details

Date Published: 18 June 2004
PDF: 12 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540319
Show Author Affiliations
Ashish Tandon, Agilent Technologies (United States)
David P. Bour, Agilent Technologies (United States)
Ying Lan Chang, Agilent Technologies (United States)
Chao Kun Lin, Agilent Technologies (United States)
Scott W. Corzine, Agilent Technologies (United States)
Michael R. Tan, Agilent Technologies (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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