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Proceedings Paper

Energy distributions of carriers in quantum dot laser structures
Author(s): Simon W. Osborne; Peter Blood; Peter M. Smowton; Julie Lutti; Y. C. Xin; Andreas Stintz; Diana L. Huffaker; Luke F. Lester
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Paper Abstract

Using the segmented contact method, we have measured the passive modal absorption, modal gain and spontaneous emission spectra of an InAs “dot-in-well” (DWELL) system where the inhomogeneous broadening is sufficiently small that the ground and excited state transitions can be spectrally resolved. The modal optical gain from the ground state saturates with current at a maximum value of one third of the magnitude of the measured absorption. The population inversion factor spectrum, obtained from the measured gain and emission spectra, shows that the carrier distributions cannot be described by a single global Fermi distribution. However, the inversion factor spectrum can be described by a system where the ground state and excited state occupancies are each described by a Fermi distribution but with different quasi-Fermi energy separations.

Paper Details

Date Published: 18 June 2004
PDF: 6 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540314
Show Author Affiliations
Simon W. Osborne, Cardiff Univ. (United Kingdom)
Peter Blood, Cardiff Univ. (United Kingdom)
Peter M. Smowton, Cardiff Univ. (United Kingdom)
Julie Lutti, Cardiff Univ. (United Kingdom)
Y. C. Xin, CHTM/Univ. of New Mexico (United States)
Andreas Stintz, CHTM/Univ. of New Mexico (United States)
Diana L. Huffaker, CHTM/Univ. of New Mexico (United States)
Luke F. Lester, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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