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Proceedings Paper

Shell model of semiconductor quantum dots
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Paper Abstract

Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).

Paper Details

Date Published: 18 June 2004
PDF: 8 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540313
Show Author Affiliations
Petr G. Eliseev, CHTM/Univ. of New Mexico (United States)
P.N. Lebedev Physical Institute (Russia)
Dan P. Popescu, CHTM/Univ. of New Mexico (United States)
T. V. Torchynska, Instituto Politecnico Nacional (Mexico)
Andreas Stintz, CHTM/Univ. of New Mexico (United States)
Kevin J. Malloy, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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