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Proceedings Paper

A 65-nm node SRAM solution using alt-PSM with ArF lithography
Author(s): Frank A.J.M. Driessen; Mary T. Zawadzki; Prakash R. Krishnan; Artur Balasinski; Geert Vandenberghe
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Paper Abstract

We present design-for-manufacturing and yield (DfM/DfY) results on SRAM of the 65-nm node by connecting knowledge of device performance with that of lithographic optical enhancement techniques. Of special interest was the lithographic quality of line-ends and gates, the former being the most critical for yield and manufacturing control. Scalability towards lower technology nodes was also part of the choice. All these considerations led to the choice of alternating-aperture phase-shift lithography as optimal reticle-enhancement technique. Predictions from simulations were verified on the wafer for SRAM cells of multiple geometry contexts, misalignment was included, and the illuminator was optimized.

Paper Details

Date Published: 3 May 2004
PDF: 11 pages
Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.540311
Show Author Affiliations
Frank A.J.M. Driessen, Synopsys, Roermond (Netherlands)
Mary T. Zawadzki, Cypress Semiconductor Corp. (United States)
Prakash R. Krishnan, Cypress Semiconductor Corp. (United States)
Artur Balasinski, Cypress Semiconductor Corp. (United States)
Geert Vandenberghe, IMEC (Belgium)

Published in SPIE Proceedings Vol. 5379:
Design and Process Integration for Microelectronic Manufacturing II
Lars W. Liebmann, Editor(s)

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