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Proceedings Paper

Digital CMOS interface circuit for current and capacitance sensing
Author(s): Ashok Srivastava
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Paper Abstract

A CMOS digital interface chip has been designed and implemented in standard 1.5 μm n-well CMOS technology for detection of current and capacitance variations across a sensing element. An on-chip digitally variable sensor element simulating current and capacitance is monolithically integrated with the readout circuitry. The chip gives an 8-bit digital output and can detect a minimum current and capacitance up to 150 μA and 2.5 fF, respectively.

Paper Details

Date Published: 29 July 2004
PDF: 12 pages
Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); doi: 10.1117/12.540114
Show Author Affiliations
Ashok Srivastava, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 5389:
Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

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