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Proceedings Paper

Quasi-static modeling of NiMnGa magnetic shape memory alloy
Author(s): Ronald N. Couch; Inderjit Chopra
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Paper Abstract

A quasi-static model for NiMnGa magnetic shape memory alloy (MSMA) is formulated on the basis of NiTi SMA constitutive models such as the Brinson model, because of the similarities that exist in the behavior of both materials. NiMnGa shows a magnetically induced shape memory effect as well as a pseudoelastic behavior. Quasi-static tests at constant applied magnetic field and stress were conducted to identify the model parameters. The material parameters include free strain, Young's modulus, critical threshold fields and stress-influence coefficients. The Young's moduli of the material in its field preferred and stress preferred states were determined to be 450 MPa and 820 MPa respectively. Critical threshold fields as a function of stress were determined from constant stress testing. These test data were used to assemble a critical stress-temperature profile that is useful in predicting the various states of the material for a wide range of magnetic or mechanical loading conditions. Although the constant applied field and constant stress data have yet to be fully correlated, the model parameters identified from the experiments were used to implement an initial version of the quasi-static model. The model shows good correlation with test data and captures both the magnetic shape memory effect and pseudoelasticity. This introductory model provides a sound basis for further refinements of a quasi-static NiMnGa model.

Paper Details

Date Published: 21 July 2004
PDF: 14 pages
Proc. SPIE 5387, Smart Structures and Materials 2004: Active Materials: Behavior and Mechanics, (21 July 2004); doi: 10.1117/12.539918
Show Author Affiliations
Ronald N. Couch, Univ. of Maryland/College Park (United States)
Inderjit Chopra, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 5387:
Smart Structures and Materials 2004: Active Materials: Behavior and Mechanics
Dimitris C. Lagoudas, Editor(s)

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