Share Email Print
cover

Proceedings Paper

Differential laterally movable gate FETs (LMGFETs) as a position sensor
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A new position sensor based on laterally movable gate FET (LMGFET) sensing element has been designed and fabricated. The position sensor is designed to operate in a differential mode, which increases device sensitivity and performance. The moving proof mass is supported on each end by a folded beam which is also employed as a spring to restrain motion. The simulated value of the folded beam spring constant designed in this work is 44.8 N/m. The LMGFET microstructure is fabricated by a four-mask LIGA-like post-IC process compatible with standard CMOS fabrication technology. p+ region is ion-implanted under the moving structure as a ground plane and also to decrease leakage currents. Plasma ashing is employed to avoid stiction. The design of the sensor along with fabrication steps is described. Preliminary results on the electrical behavior of the fabricated LMGFET are given.

Paper Details

Date Published: 29 July 2004
PDF: 7 pages
Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); doi: 10.1117/12.539782
Show Author Affiliations
In-Hyouk Song, Louisiana State Univ. (United States)
Pratul K. Ajmera, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 5389:
Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top