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Proceedings Paper

A New Approach to Pattern Metrology
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Paper Abstract

We describe an approach to pattern metrology that enables the simultaneous determination of critical dimensions, overlay and film thickness. A single optical system captures nonzero- and zero-order diffracted signals from illuminated grating targets, as well as unpatterned regions of the surrounding substrate. Differential targets provide in situ dimensional calibration. CD target signals are analyzed to determine average dimension, profile attributes, and effective dose and defocus. In turn, effective dose and defocus determines all CDs pre-correlated to the dose and focus settings of the exposure tool. Overlay target signals are analyzed to determine the relative reflectivity of the layer pair and the overlay error between them. Compared to commercially available pattern metrology (SEM, optical microscopy, AFM, scatterometry and schnitzlometry), our approach promises improved signal-to-noise, higher throughput and smaller targets. We have dubbed this optical chimera MOXIE (Metrology Of eXtremely Irrational Exuberance).

Paper Details

Date Published: 24 May 2004
PDF: 15 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.539143
Show Author Affiliations
Christopher P. Ausschnitt, IBM Semiconductor Research and Development Ctr. (United States)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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