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Proceedings Paper

Laser-induced bandgap engineering for multicolor detection with a GaAs/AlGaAs quantum well infrared photodetector
Author(s): Jan J. Dubowski; X. Richard Zhang; Xianfan Xu; Jacques Lefebvre; Zbigniew R. Wasilewski
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Paper Abstract

Post-growth selective-area laser tuning of quantum well infrared photo-detector (QWIP) material has been investigated as a possible route towards the fabrication of a multicolor low-cost focal plane array device. The method takes advantage of the infrared laser for inducing local temperature of a semiconductor wafer that leads to a spatially selective quantum well intermixing (QWI) process. The wafer consisting of 30-pairs of 6 nm GaAs quantum wells and 35 nm Al0.31Ga0.69As barriers was irradiated by a fast scanning CW Nd:YAG laser beam projecting a total of 12 lines spaced at 0.8 mm. For the chosen pattern, writing scheme and a total power delivered to the sample, a material has been fabricated with 12-regions of distinctly different bandgaps in the range of 790 to 830 nm. Preliminary calculations predict reasonably well the laser-induced temperature profile achieved with a stationary laser beam. However, a more advanced model needs to be developed in order to describe temperature profiles induced with a fast scanning laser beam.

Paper Details

Date Published: 15 July 2004
PDF: 7 pages
Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); doi: 10.1117/12.538369
Show Author Affiliations
Jan J. Dubowski, Univ. de Sherbrooke (Canada)
X. Richard Zhang, Purdue Univ. (United States)
Xianfan Xu, Purdue Univ. (United States)
Jacques Lefebvre, National Research Council (Canada)
Zbigniew R. Wasilewski, National Research Council (Canada)

Published in SPIE Proceedings Vol. 5339:
Photon Processing in Microelectronics and Photonics III
Jan J. Dubowski; Peter R. Herman; Friedrich G. Bachmann; Willem Hoving; Jim Fieret; David B. Geohegan; Frank Träger; Kunihiko Washio; Alberto Pique; Xianfan Xu; Tatsuo Okada, Editor(s)

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