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Proceedings Paper

High-performance circuit design for the RET-enabled 65-nm technology node
Author(s): Lars W. Liebmann; Arnold E. Barish; Zachary Baum; Henry A. Bonges; Scott J. Bukofsky; Carlos A. Fonseca; Scott D. Halle; Gregory A. Northrop; Steven L. Runyon; Leon Sigal
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Paper Abstract

The implementation of alternating phase shifted mask lithography for the poly-conductor level of IBM's leading edge 65nm microprocessor is described. Very broad and 'resolution-enhancement-technology generic' design rules, referred to as radical design restrictions, are demonstrated to be key enablers of alternating phase shifted mask design. The benefit of these radical design restrictions over conventional design rules and other alternating phase shifted mask design approaches is detailed for key aspects of the design flow.

Paper Details

Date Published: 3 May 2004
PDF: 10 pages
Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.538242
Show Author Affiliations
Lars W. Liebmann, IBM Microelectronics Div. (United States)
Arnold E. Barish, IBM Corp. (United States)
Zachary Baum, IBM Microelectronics Div. (United States)
Henry A. Bonges, IBM Microelectronics Div. (United States)
Scott J. Bukofsky, IBM Microelectronics Div. (United States)
Carlos A. Fonseca, IBM Microelectronics Div. (United States)
Scott D. Halle, IBM Microelectronics Div. (United States)
Gregory A. Northrop, IBM Corp. (United States)
Steven L. Runyon, IBM Corp. (United States)
Leon Sigal, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 5379:
Design and Process Integration for Microelectronic Manufacturing II
Lars W. Liebmann, Editor(s)

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