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Proceedings Paper

Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control
Author(s): Matthew Sendelbach; Wesley Natzle; Charles N. Archie; Bill Banke; Dan Prager; Dan Engelhard; Jason Ferns; Asao Yamashita; Merritt Funk; Fumihiko Higuchi; Masayuki Tomoyasu
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Paper Abstract

As feature geometries decrease, the budgeted error for process variations decreases as well. Keeping these variations within budget is especially important in the area of gate linewidth control. Because of this, wafer-to-wafer control of gate linewidth becomes increasingly necessary. This paper shows results from 300 mm wafers with 90 nm technology that were trimmed during the gate formation process on an etch platform. After the process that opened the gate hard mask and stripped the resist, the wafers were measured using both an integrated scatterometer and a stand-alone CD-SEM. The measurements were then used to determine the appropriate amount to be trimmed by the Chemical Oxide Removal (COR) chamber that is also integrated onto the etch system. After the wafers were trimmed and etched, they were again measured on the integrated scatterometer and stand-alone CD-SEM. With the CD-SEM as the Reference Measurement System (RMS), Total Measurement Uncertainty (TMU) analysis was used to optimize the Optical Digital Profilometry (ODP) model, thus facilitating a significant reduction in gate linewidth variation. Because the measurement uncertainty of the scatterometer was reduced to a level approaching or below that of the RMS, an improvement to TMU analysis was developed. This improvement quantifies methods for determining the measurement uncertainty of the RMS under a variety of situations.

Paper Details

Date Published: 24 May 2004
PDF: 17 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.537969
Show Author Affiliations
Matthew Sendelbach, IBM Microelectronics Div. (United States)
Wesley Natzle, IBM Microelectronics Div. (United States)
Charles N. Archie, IBM Microelectronics Div. (United States)
Bill Banke, IBM Microelectronics Div. (United States)
Dan Prager, Timbre Technologies, Inc. (United States)
Dan Engelhard, Timbre Technologies, Inc. (United States)
Jason Ferns, Timbre Technologies, Inc. (United States)
Asao Yamashita, Tokyo Electron Massachusetts, Inc. (United States)
Merritt Funk, Tokyo Electron America, Inc. (United States)
Fumihiko Higuchi, Tokyo Electron Massachusetts, Inc. (United States)
Masayuki Tomoyasu, Tokyo Electron, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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