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Proceedings Paper

Height and sidewall angle SEM metrology accuracy
Author(s): Roman Kris; Ofer Adan; Aviram Tam; Albert Yu. Karabekov; Ovadya Menadeva; Ram Peltinov; Ayelet Pnueli; Oren Zoran; Arcadiy Vilenkin
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Paper Abstract

Downscaling of semiconductor fabrication technology nodes brought forth a need to reassess the accuracy of 3D metrology. Accuracy is defined relative to a reference tool measurement. The authors have studied the accuracy of 3D SEM measurement results for various feature geometries and materials, matching the results to Monte Carlo simulations. Analysis of the SEM images based on an analytical model was performed. Accuracy of 3D algorithm for nominal process window monitoring is shown.

Paper Details

Date Published: 24 May 2004
PDF: 12 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.537938
Show Author Affiliations
Roman Kris, Applied Materials, Inc. (Israel)
Ofer Adan, Applied Materials, Inc. (Israel)
Aviram Tam, Applied Materials, Inc. (Israel)
Albert Yu. Karabekov, Applied Materials, Inc. (Israel)
Ovadya Menadeva, Applied Materials, Inc. (Israel)
Ram Peltinov, Applied Materials, Inc. (Israel)
Ayelet Pnueli, Applied Materials, Inc. (Israel)
Oren Zoran, Applied Materials, Inc. (Israel)
Arcadiy Vilenkin, Hebrew Univ. of Jerusalem (Israel)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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