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Proceedings Paper

Design and development of high etch rate organic bottom antireflective coating for sub-100 nm node and beyond
Author(s): Hengpeng Wu; Zhong Xiang; Aritaka Hishida; David Abdallah; Jianhui Shan; Eleazar Gonzalez; Shuji S. Ding; Mark Neisser
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Paper Abstract

As the semiconductor industry sails into the 100nm node and beyond, enabled by the integration of ArF lithography, new Bottom Antireflective Coatings (B.A.R.C.s) are required to address challenges associated with this new technology. Of these challenges, higher etch rates and better compatibility with the over coated resist are of central importance. New polymer platforms and additives in B.A.R.C. formulations will be required to overcome these challenges. The intent of this publication is to introduce our newly developed B.A.R.C.s designed to addresses the challenges of ArF lithography. All are currently available for integration into mass production of sub 100nm integrated circuit devices.

Paper Details

Date Published: 14 May 2004
PDF: 6 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537883
Show Author Affiliations
Hengpeng Wu, Clariant Corp. (United States)
Zhong Xiang, Clariant Corp. (United States)
Aritaka Hishida, Clariant Corp. (United States)
David Abdallah, Clariant Corp. (United States)
Jianhui Shan, Clariant Corp. (United States)
Eleazar Gonzalez, Clariant Corp. (United States)
Shuji S. Ding, Clariant Corp. (United States)
Mark Neisser, Clariant Corp. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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