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Proceedings Paper

Synthetic IR signature control using emissivity enhancement techniques
Author(s): Volodymyr K. Malyutenko; Oleg Yu. Malyutenko; Vyacheslav V. Bogatyrenko; Sergiy V. Chyrchyk; James R. Kircher; Robert L. Murrer; Donald R. Snyder
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Paper Abstract

In this report, we show both theoretically and experimentally how the IR signature of a semiconductor scene (with band gap energy Eg) can be monitored through contactless emissivity control even if this scene thermometric temperature is kept constant. More specifically, we show how a scene emissivity in the spectral band beyond the fundamental absorption range (ω2 < Eg / h, 3 to 5 μm and 8 to 12 μm transparency windows) can be dynamically (frame frequency > 20 kHz) monitored by a shorter wavelength photo excitation of non-equilibrium charge carriers (ω1 > Eg/h, "visible range"). Experimental tests performed on Si and Ge scenes (300 < T < 600 K), demonstrate optically generated cold and hot images and, what is more important, negligible temperature contrast between an object and a background (Stealth effect in IR).

Paper Details

Date Published: 4 August 2004
PDF: 9 pages
Proc. SPIE 5408, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX, (4 August 2004); doi: 10.1117/12.537758
Show Author Affiliations
Volodymyr K. Malyutenko, Institute of Semiconductor Physics (Ukraine)
Oleg Yu. Malyutenko, Institute of Semiconductor Physics (Ukraine)
Vyacheslav V. Bogatyrenko, Institute of Semiconductor Physics (Ukraine)
Sergiy V. Chyrchyk, Institute of Semiconductor Physics (Ukraine)
James R. Kircher, Eastman Kodak Co. (United States)
Robert L. Murrer, Millennium Engineering and Integration Co. (United States)
Donald R. Snyder, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 5408:
Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX
Robert Lee Murrer, Editor(s)

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