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Proceedings Paper

Crystallization of 500-nm-thick a-SiGe:H films through ArF-excimer laser radiation
Author(s): S. Chiussi; F. Fabbri; Lucilla Fornarini; P. Gonzalez; B. Leon; Stefano Martelli; E. Lopez; C. Serra; J. Serra
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Paper Abstract

It is found that the intensity of resonant light scattering in the region of excitonic transitions in GaAs/AlGaAs quantum-well structures is modulated strongly (up to 40% under our experimental conditions) upon additional pumping of the structure by radiation with the photon energy exceeding the band gap in the barrier layers. The effect observed originates from the redistribution of the oscillator strengths of the excitonic transitions due to the formation of charged three-particle complexes (trions) made possible by the accumulation of nonequilibrium charge carriers of one particular sign (holes in our case) in the quantum wells upon above-barrier pumping.

Paper Details

Date Published: 14 November 2003
PDF: 8 pages
Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.537582
Show Author Affiliations
S. Chiussi, Univ. of Vigo (Spain)
F. Fabbri, ENEA Frascati (Italy)
Lucilla Fornarini, ENEA Frascati (Italy)
P. Gonzalez, Univ. of Vigo (Spain)
B. Leon, Univ. of Vigo (Spain)
Stefano Martelli, ENEA Frascati (Italy)
E. Lopez, Univ. of Vigo (Spain)
C. Serra, Univ. of Vigo (Spain)
J. Serra, Univ. of Vigo (Spain)


Published in SPIE Proceedings Vol. 5147:
ALT'02 International Conference on Advanced Laser Technologies
Heinz P. Weber; Vitali I. Konov; Thomas Graf, Editor(s)

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