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Proceedings Paper

The lithographic impact of resist model parameters
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Paper Abstract

The resist models in PROLITH are designed to be a mechanistic description of the resist chemistry and physics of optical lithography. This is especially true for the expose and post-exposure bake processes, where the resist chemistry can be mapped almost directly to the input parameters in the PROLITH models. In this study, we review the models in PROLITH and show how different chemistry parameters, such as the quantum yield and the reaction kinetics during PEB, can be translated into resist model parameters. With this “chemist to simulator” translator, we show how the models can be used to better understand how resist formulation impacts resist response. Specifically, we will show how quencher loading, and acid and quencher diffusivities impact depth of focus for isolated and dense features.

Paper Details

Date Published: 14 May 2004
PDF: 11 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537581
Show Author Affiliations
Mark D. Smith, KLA-Tencor Corp. (United States)
Jeffrey D. Byers, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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