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Proceedings Paper

Nanopillars for bandgap engineering in III-V optoelectronic devices
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Paper Abstract

The absorption or emission wavelength in optoelectronic devices such as quantum well infrared photodetectors, quantum cascade lasers, and type II superlattice photodiodes can be controlled by the thickness and composition of the quantum wells that constitute their active layers. By further confining the charge carriers, for instance in a quantum dot, even more control can be gained over energy transitions within the semiconductor crystal. We propose a method for manipulating the semiconductor band structure by confining carriers within nanopillar structures. Using electron beam lithography and dry plasma etching, we can precisely control the pillar placement, density and dimensions, and thus the performance characteristics, of the optoelectronic device. Furthermore, by patterning different size structures, it is possible to create arrays of multi-color devices on the same substrate, a technique that lends itself to large-scale monolithic integration. We demonstrate the fabrication of nanopillar arrays in the GaSb, GaInP, GaInAs, and type II InAs/GaSb superlattice material systems and show initial photoluminescence data, which seems to indicate quantum confinement within these structures.

Paper Details

Date Published: 14 June 2004
PDF: 10 pages
Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); doi: 10.1117/12.537565
Show Author Affiliations
Aaron Gin, Northwestern Univ. (United States)
Yajun Wei, Northwestern Univ. (United States)
Andrew Hood, Northwestern Univ. (United States)
Adnan Bajowala, Northwestern Univ. (United States)
Quang Nguyen, Northwestern Univ. (United States)
Vahid R. Yazdanpanah, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Meimei Z. Tidrow, Missile Defense Agency (United States)


Published in SPIE Proceedings Vol. 5361:
Quantum Dots, Nanoparticles, and Nanoclusters
Diana L. Huffaker; Pallab Bhattacharya, Editor(s)

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