Share Email Print
cover

Proceedings Paper

Recent advances in fluorinated resists for application at 157 nm
Author(s): Francis M. Houlihan; Raj Sakamuri; Andrew Romano; David Rentkiewicz; Ralph R. Dammel; Willard E. Conley; Daniel A. Miller; Michael Sebald; Nickolay Stepanenko; Matthias Markert; Uta Mierau; Inge Vermeir; Christoph Hohle; Toshiro Itani; Masato Shigematsu; Etsurou Kawaguchi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper is part of our continuing work on a new generation of more transparent, 157 nm resist platforms, which are based upon capping of fluoroalcohol-substituted, transparent perfluorinated resins (TFR) with a tert-butoxycarbonylmethyl (BOCME) moiety. Recent results indicate that by optimizing both resin structure and loading of photoacid generator and base additive a good compromise can be achieved between resolution power, dark erosion resistance, sensitivity and transparency at 157 nm. Specifically, it was found that a decrease in PAG (50% nominal loading) and base loading (75% nominal loading), coupled with optimization of the TFR resins to achieve higher transparency, gives the best compromise of properties. In this manner, resist systems with a transparency as low as 0.87 AU/micron were designed capable of resolving 60 nm 1:1 features, at a dose of 92 mJ/cm2 (non corrected for sigma), using a strong phase shift mask, and a sigma of 0.3 on a Exitech 157 nm small field mini-stepper. This type of resist material has also been imaged with a larger field tool (DUV30 Micrascan VII) to give 80 nm 1.1.5 L/S features at a dose of 135 mJ/cm2 employing using a Binary mask (σ=0.85). Finally, it was found that our BOCME-TFR based resist system can be used to transfer a 120 nm L/S pattern (imaged by 193 nm lithography) into a hardmask stack on top of silicon.

Paper Details

Date Published: 14 May 2004
PDF: 17 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537541
Show Author Affiliations
Francis M. Houlihan, Clariant Corp. (United States)
Raj Sakamuri, Clariant Corp. (United States)
Andrew Romano, Clariant Corp. (United States)
David Rentkiewicz, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Willard E. Conley, International SEMATECH (United States)
Daniel A. Miller, International SEMATECH (United States)
Michael Sebald, Infineon Technologies AG (Germany)
Nickolay Stepanenko, Infineon Technologies AG (Germany)
Matthias Markert, Infineon Technologies AG (Germany)
Uta Mierau, Infineon Technologies AG (Germany)
Inge Vermeir, Infineon Technologies AG (Germany)
Christoph Hohle, Infineon Technologies AG (Germany)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masato Shigematsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Etsurou Kawaguchi, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top