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Proceedings Paper

Development of silicon-on-insulator waveguide technology
Author(s): Timo T. Aalto; Mikko Harjanne; Markku Kapulainen; Paivi Heimala; Matti J. Leppihalme
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Paper Abstract

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples.

Paper Details

Date Published: 28 May 2004
PDF: 15 pages
Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); doi: 10.1117/12.537540
Show Author Affiliations
Timo T. Aalto, VTT Information Technology (Finland)
Mikko Harjanne, Helsinki Univ. of Technology (Finland)
Markku Kapulainen, VTT Information Technology (Finland)
Paivi Heimala, VTT Information Technology (Finland)
Matti J. Leppihalme, VTT Information Technology (Finland)
Helsinki Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 5355:
Integrated Optics: Devices, Materials, and Technologies VIII
Yakov Sidorin; Ari Tervonen, Editor(s)

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