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Proceedings Paper

Contact hole edge roughness: circles vs. stars
Author(s): Andrew Habermas; Qingyou Lu; David Chase-Colin; Michael Har-Zvi; Aviram Tam; Omer Sagi
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Paper Abstract

The edge roughness of straight lines has received intense focus in the past, whereas the edge roughness of contact holes has been relatively unexplored. Reductions in contact hole roughness can be shown to offer improvements in electrical breakdown voltages, or potentially the opportunity for reduced cellsize. This paper introduces two CD-SEM algorithms for characterizing the amplitude and frequency of contact hole edge roughness. When combined, these two metrics proved capable of detecting differences within four wafer pairs with varying dimension and processing. Increased roughness amplitude was shown to correlate to electrical breakdown failures.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.537537
Show Author Affiliations
Andrew Habermas, Cypress Semiconductor Corp. (United States)
Qingyou Lu, Cypress Semiconductor Corp. (United States)
David Chase-Colin, Applied Materials, Inc. (Israel)
Michael Har-Zvi, Applied Materials, Inc. (Israel)
Aviram Tam, Applied Materials, Inc. (Israel)
Omer Sagi, Applied Materials, Inc. (Israel)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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