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Proceedings Paper

Laser annealing of ion-implanted diamond
Author(s): Sergej M. Pimenov; Vitaliy V. Kononenko; Taras V. Kononenko; Vitali I. Konov; Pascal Fischer; Valerio Romano; Heinz P. Weber; A. V. Khomich; R. A. Khmelnitskiy
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Paper Abstract

Laser-induced structure transformations in diamond single crystals implanted with light ions (H+, D+, He+) are studied by monitoring changes in the material density and optical transmission in dependence on UV laser pulsed irradiation parameters and ion implantation conditions. Characteristic features of the processes of laser annealing, graphitization, low-rate etching and explosive ablation of ion-implanted diamond layers are discussed.

Paper Details

Date Published: 14 November 2003
PDF: 12 pages
Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.537498
Show Author Affiliations
Sergej M. Pimenov, General Physics Institute (Russia)
Vitaliy V. Kononenko, General Physics Institute (Russia)
Taras V. Kononenko, General Physics Institute (Russia)
Vitali I. Konov, General Physics Institute (Russia)
Pascal Fischer, Univ. of Bern (Switzerland)
Valerio Romano, Univ. of Bern (Switzerland)
Heinz P. Weber, Univ. of Bern (Switzerland)
A. V. Khomich, Institute of Radio Engineering and Electronics (Russia)
R. A. Khmelnitskiy, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 5147:
ALT'02 International Conference on Advanced Laser Technologies
Heinz P. Weber; Vitali I. Konov; Thomas Graf, Editor(s)

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