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Proceedings Paper

Full field imaging with a 157-nm scanner
Author(s): Chris Robinson; Nakgeuon Seong; Kurt Kimmel; Timothy A. Brunner; Michael Hibbs; Michael J. Lercel; Diane McCafferty; Harry Sewell; Timothy K. O'Neil; Juan Ivaldi; Keith Andresen
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Paper Abstract

157 nm has been explored as a lithographic technology for several years on small field imaging tools with encouraging results. Significant progress has occurred in tool platform design, resist performance, and optical material quality. However, a major test of a new lithography comes when full field, scanned images can be produced as this becomes a crucial test of system performance and uniformity. We report on early results from a 22 mm x 26 mm (slot x scan) field Micrascan VII 157 nm lithography scanner obtained using a binary reticle. In addition, a full field alternating phase shift reticle was fabricated on modified fused silica1 and used to extend the imaging capability. Resolution and uniformity data from both reticles will be presented. The lithographic performance will also be compared to simulations using predicted performance from the scanner.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537447
Show Author Affiliations
Chris Robinson, IBM Microelectronics Div. (United States)
Nakgeuon Seong, IBM Microelectronics Div. (United States)
Kurt Kimmel, IBM Microelectronics Div. (United States)
Timothy A. Brunner, IBM Microelectronics Div. (United States)
Michael Hibbs, IBM Microelectronics Div. (United States)
Michael J. Lercel, IBM Microelectronics Div. (United States)
Diane McCafferty, ASML (United States)
Harry Sewell, ASML (United States)
Timothy K. O'Neil, ASML (United States)
Juan Ivaldi, ASML (United States)
Keith Andresen, ASML (United States)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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