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Proceedings Paper

Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions
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Paper Abstract

The device design rule is continuously shrinking toward optical resolution limit where k1 factor is below 0.3. The requirement for 193 nm photoresist below 90 nm node is quite challenging at the manufacturing phase. Using DI water rinse after development gives a significant amount of line collapse when the aspect ratio is over 3. To avoid line collapse, we co-developed special rinse solution for FIRM process with Tokyo Electron Ltd. Utilizing FIRM process, 90 nm dense line collapse was measured by CD SEM using focus-exposure matrices. The line collapse property has been observed using experimental 193 nm positive tone resist by varying monomer ratio of the polymer and process conditions. The surface property of the resist was also studied to investigate the interaction with rinse solution at the de-protected polymer region. However, a high surfactant concentration in the DI water rinse leads the swelling of the resist pattern profile. The resist component is the key to determine adequate surfactant concentration in rinse solution to minimize line collapse and pattern deformation

Paper Details

Date Published: 14 May 2004
PDF: 11 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537409
Show Author Affiliations
Seiya Masuda, Clariant (Japan) K.K. (Japan)
Masakazu Kobayashi, Clariant (Japan) K.K. (Japan)
Woo-Kyu Kim, Clariant Corp. (United States)
Clement Anyadiegwu, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Keiichi Tanaka, Tokyo Electron Kyushu Ltd. (Japan)
Yoshiaki Yamada, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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