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Proceedings Paper

Immersion microlithography at 193 nm with a Talbot prism interferometer
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Paper Abstract

A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537350
Show Author Affiliations
Anatoly Bourov, Rochester Institute of Technology (United States)
Yongfa Fan, Rochester Institute of Technology (United States)
Frank Charles Cropanese, Rochester Institute of Technology (United States)
Neal Vincent Lafferty, Rochester Institute of Technology (United States)
Lena V. Zavyalova, Rochester Institute of Technology (United States)
Hoyoung Kang, Rochester Institute of Technology (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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