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Proceedings Paper

Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI
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Paper Abstract

Point diffraction interferometry (PDI) is a promising candidate of the wavefront metrology for EUV lithographic projection optics. However, the pinhole used in the PDI is easily filled up with carbon contamination induced by EUV irradiation. We have evaluated the filling rate of pinholes by measuring decreasing rates of intensity of EUV radiation that passed through the pinholes. As a result, we found the filling rates of the pinholes depend on their materials and blowing of the oxygen. The filling rate was the slowest when the pinhole made of Ni was used and oxygen was blown.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537344
Show Author Affiliations
Katsumi Sugisaki, Extreme Ultraviolet Lithography System Development Association (Japan)
Masanobu Hasegawa, Extreme Ultraviolet Lithography System Development Association (Japan)
Seima Kato, Extreme Ultraviolet Lithography System Development Association (Japan)
Chidane Ouchi, Extreme Ultraviolet Lithography System Development Association (Japan)
Jun Saito, Extreme Ultraviolet Lithography System Development Association (Japan)
Masahito Niibe, Himeji Institute of Technology (Japan)
Akiyoshi Suzuki, Extreme Ultraviolet Lithography System Development Association (Japan)
Katsuhiko Murakami, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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