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Proceedings Paper

Lateral shearing interferometer for EUVL: theoretical analysis and experiment
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Paper Abstract

We present the theoretical measurement accuracy analysis for at wavelength characterization of the projection lens to be used in extreme-ultraviolet lithography (EUVL) and the first experimental result from the lateral shearing interferometer (LSI) test system. LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing at the EUV region during alignment of the projection optics. To address the problem of multiple-beam interference, we propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order effect. The main error source effects including shear ratio estimation, hyperbolic calibration, charge coupled device (CCD) size effect, and CCD tilt effect are characterized in detail. The total measurement accuracy of the LSI is estimated to be within 7mλ rms (0.1 nm rms at 13.5 nm wavelength).

Paper Details

Date Published: 20 May 2004
PDF: 9 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537331
Show Author Affiliations
Yucong Zhu, Extreme Ultraviolet Lithography System Development Association (Japan)
Katsumi Sugisaki, Extreme Ultraviolet Lithography System Development Association (Japan)
Chidane Ouchi, Extreme Ultraviolet Lithography System Development Association (Japan)
Masanobu Hasegawa, Extreme Ultraviolet Lithography System Development Association (Japan)
Masahito Niibe, Himeji Institute of Technology (Japan)
Akiyoshi Suzuki, Extreme Ultraviolet Lithography System Development Association (Japan)
Katsuhiko Murakami, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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