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Proceedings Paper

Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography
Author(s): Geunsu Lee; Young Sun Hwang; Keun Do Ban; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin
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Paper Abstract

In-house rinse, HR31 has a strong point in terms of lithographic performance, defect, bubble, and metal impurity. The collapse behavior was quantified in terms of SMCD (Standing Minimum CD) in 80nm dense L/S ArF resist patterns. It contributed to enlarging process window by improving collapse (SMCD: 84→72nm), CD uniformity (12.3→9.3nm), and lithographic margin [EL (11.7→12.8%), and DOF (0.20→0.25µm)].

Paper Details

Date Published: 14 May 2004
PDF: 6 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537193
Show Author Affiliations
Geunsu Lee, Hynix Semiconductor Inc. (South Korea)
Young Sun Hwang, Hynix Semiconductor Inc. (South Korea)
Keun Do Ban, Hynix Semiconductor Inc. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)
Ki Soo Shin, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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