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Proceedings Paper

Critical failure ORC: application to the 90-nm and 65-nm nodes
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Paper Abstract

In this paper, we present a new technique (Critical Failure ORC or CF-ORC) to check the robustness of the structures created by OPC through the process window. The full methodology is explained and tested on a full chip at the 90- nm node. Improvements compared to standard ORC/MRC techniques will be presented on complex geometries. Finally, examples of concrete failure predictions are given and compared to experimental results.

Paper Details

Date Published: 28 May 2004
PDF: 14 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537190
Show Author Affiliations
Jerome Belledent, Philips Semiconductors (France)
Shumay Dou Shang, Mentor Graphics Corp. (United States)
Yorick Trouiller, LETI-CEA (France)
Corinne Miramond, STMicroelectronics (France)
Kyle Patterson, Motorola (France)
Olivier R. Toublan, Mentor Graphics Corp. (France)
Christophe Couderc, Philips Semiconductors (France)
Frank Sundermann, STMicroelectronics (France)
Yves Fabien Rody, Philips Semiconductors (France)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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