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Exposure simulation of electron beam microcolumn lithography
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Paper Abstract

We propose an improved method to describe the electron-resist interaction based on Dill’s model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill’s model. Our simulation profiles show a good agreement with experimental profiles.

Paper Details

Date Published: 20 May 2004
PDF: 5 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537128
Show Author Affiliations
Sang-Kon Kim, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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