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Proceedings Paper

IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance
Author(s): Kaushal S. Patel; Margaret C. Lawson; Pushkara Rao Varanasi; David R. Medeiros; Gregory M. Wallraff; Phillip J. Brock; Richard A. DiPietro; Yukio Nishimura; Takashi Chiba; Mark Slezak
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Paper Abstract

It has been previously proposed that negative-tone resist process would have an intrinsic advantage for printing narrow trench geometry. To demonstrate this for 193nm lithography, a negative resist with performance comparable to a leading positive resist is required. In this paper we report the joint development of a hexafluoroalcohol containing, 193nm, negative-tone, chemically amplified resist based on the crosslinking approach. Lithographic performance is presented which includes the ability of the negative-tone resist to print 90nm line/space and isolated trenches with standard resist processing. The impact of the fluorinated polymer on etch performance is also quantified. Finally, key resist characteristics and their influence on performance and limiting factors such as microbridging are discussed.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.536874
Show Author Affiliations
Kaushal S. Patel, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
David R. Medeiros, IBM Corp. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
Richard A. DiPietro, IBM Almaden Research Ctr. (United States)
Yukio Nishimura, JSR Corp. (Japan)
Takashi Chiba, JSR Corp. (Japan)
Mark Slezak, JSR Micro, Inc. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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