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Proceedings Paper

Feasibility of immersion lithography
Author(s): Soichi Owa; Hiroyuki Nagasaka; Yuuki Ishii; Osamu Hirakawa; Taro Yamamoto
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Paper Abstract

Feasibility of ArF (193nm) immersion lithography is reported based on our recent experimental and theoretical studies. Local fill method of water, edge shot, high NA projection optics, focus sensing, water supply, polarization effect, polarized illumination and resist are investigated. Although we recognize there are some remaining engineering risks, we have judged that ArF immersion lithography is basically feasible and is a very promising method that can reach the half pitch required for the 45nm node. On this basis we have planned our development schedule of immersion exposure tools.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536852
Show Author Affiliations
Soichi Owa, Nikon Corp. (Japan)
Hiroyuki Nagasaka, Nikon Corp. (Japan)
Yuuki Ishii, Nikon Corp. (Japan)
Osamu Hirakawa, Tokyo Electron Kyushu Ltd. (Japan)
Taro Yamamoto, Tokyo Electron Kyushu Ltd. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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